Datasheet Summary
DataSheet.in
30 V, 3.5 A NPN low VCEsat (BISS) transistor
Rev. 01
- 30 January 2010 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP plement: PBSS4032PD.
1.2 Features
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- Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
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