* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit
PBSS4032SP Datasheet (188.71 KB)
PBSS4032SP
188.71 KB
4.8a pnp/pnp low v_cesat (biss) transistor.
DataSheet.in PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Rev. 1 14 July 2010 Product data sheet 1. Product profile 1.1 Gen.
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