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PBSS4032SP - 4.8A PNP/PNP Low V_CEsat (BISS) Transistor

Datasheet Summary

Description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

Table 1.

Features

  • Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Datasheet Details

Part number PBSS4032SP
Manufacturer NXP
File Size 188.71 KB
Description 4.8A PNP/PNP Low V_CEsat (BISS) Transistor
Datasheet download datasheet PBSS4032SP Datasheet
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DataSheet.in PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Rev. 1 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP PBSS4032SP SOT96-1 Name SO8 NPN/NPN complement PBSS4032SN NPN/PNP complement PBSS4032SPN Type number 1.2 Features and benefits „ „ „ „ „ „ Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.
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