PBSS4130T Datasheet - NXP

NPN low VCEsat (BISS) transistor

PBSS4130T Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High efficiency leading to less heat generation

* Reduced printed-circuit board requirements

* Cost effective alternative to MOSFETs in specific applications. AP

PBSS4130T General Description

NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5130T. MARKING TYPE NUMBER PBSS4130T Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS413.

PBSS4130T Datasheet (70.61 KB)

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Datasheet Details

Part number:

PBSS4130T

Manufacturer:

NXP ↗

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70.61 KB

Description:

Npn low vcesat (biss) transistor.
DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4130T 30 V, 1 A NPN low VCEsat (BISS) transistor Product speciﬁcation 2003 Nov 27 Free Datasheet htt.

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PBSS4130T NPN low VCEsat BISS transistor NXP

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PBSS4130T Features

PBSS4130T General Description

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