PBSS4260PAN transistor equivalent, npn/npn low vcesat (biss) transistor.
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Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at h.
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Load switch Battery-driven devices Power management Charging circuits Power switches (e.g..
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4260PANP. PNP/PNP complement: PBSS5260PAP.
2. Features and benefit.
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