• Part: PBSS4260QA
  • Description: NPN low VCEsat (BISS) transistor
  • Manufacturer: NXP Semiconductors
  • Size: 270.41 KB
Download PBSS4260QA Datasheet PDF
NXP Semiconductors
PBSS4260QA
PBSS4260QA is NPN low VCEsat (BISS) transistor manufactured by NXP Semiconductors.
DF N1 01 28 August 2013 0D -3 60 V, 2 A NPN low VCEsat (BISS) transistor Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP plement: PBSS5260QA. 2. Features and benefits - - - - - - - Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified 3. Applications - - -...