PBSS4350T transistor equivalent, npn transistor.
* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
* High collector current capability
* High collector current gain
* Improve.
* Power management applications
* Low and medium power DC/DC convertors
* Supply line switching
* Batter.
NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5350T.
MARKING
TYPE NUMBER PBSS4350T
MARKING CODE(1) ZC*
Note
1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China.
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SYMBOL
PAR.
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