PBSS4350T Datasheet - NXP

NPN transistor

PBSS4350T Features

* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat

* High collector current capability

* High collector current gain

* Improved efficiency due to reduced heat generation. APPLICATIONS

* Power management applications

* Low a

PBSS4350T General Description

NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5350T. MARKING TYPE NUMBER PBSS4350T MARKING CODE(1) ZC * Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICRP collector-em.

PBSS4350T Datasheet (93.94 KB)

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Datasheet Details

Part number:

PBSS4350T

Manufacturer:

NXP ↗

File Size:

93.94 KB

Description:

Npn transistor.
DISCRETE SEMICONDUCTORS DATA SHEET PBSS4350T 50 V; 3 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Jan 0.

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PBSS4350T NPN transistor NXP

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PBSS4350T Features

PBSS4350T General Description

Datasheet Details

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