* Low collector-emitter saturation voltage
* High collector current capability: IC and ICM
* High collector current gain (hFE) at high IC
* Higher efficiency leading to less heat generation
* Reduced PCB area requirements compared to DPAK. APPLICATIONS
PBSS4350Z Datasheet (92.17 KB)
PBSS4350Z
92.17 KB
Npn transistor.
DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product data sheet Supersedes data of 2003 Jan 2.
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