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PBSS5130PAP Datasheet, NXP

PBSS5130PAP Datasheet, NXP

PBSS5130PAP

datasheet Download (Size : 270.83KB)

PBSS5130PAP Datasheet

PBSS5130PAP transistor equivalent, pnp/pnp low vcesat (biss) transistor.

PBSS5130PAP

datasheet Download (Size : 270.83KB)

PBSS5130PAP Datasheet

Features and benefits


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* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at h.

Application


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* Load switch Battery-driven devices Power management Charging circuits Power switches (e.g..

Description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4130PANP. NPN/NPN complement: PBSS4130PAN. 2. Features and benefit.

Image gallery

PBSS5130PAP Page 1 PBSS5130PAP Page 2 PBSS5130PAP Page 3

TAGS

PBSS5130PAP
PNP
PNP
low
VCEsat
BISS
transistor
NXP

Manufacturer


NXP (https://www.nxp.com/)

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