PBSS5350T Datasheet - NXP

50 V/ 3 A PNP low VCEsat (BISS) transistor

PBSS5350T Features

* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat

* High collector current capability

* High collector current gain

* Improved efficiency due to reduced heat generation. APPLICATIONS

* Power management applications

* Low an

PBSS5350T General Description

PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4350T. MARKING TYPE NUMBER PBSS5350T Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPENUMBER NAME PBSS5350T * DESCRIPTION plastic surface mou.

PBSS5350T Datasheet (86.21 KB)

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Datasheet Details

Part number:

PBSS5350T

Manufacturer:

NXP ↗

File Size:

86.21 KB

Description:

50 v/ 3 a pnp low vcesat (biss) transistor.
DISCRETE SEMICONDUCTORS DATA SHEET PBSS5350T 50 V, 3 A PNP low VCEsat (BISS) transistor Product speciﬁcation Supersedes data of 2002 Aug 08 2004 Jan.

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PBSS5350T PNP low VCEsat BISS transistor NXP

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PBSS5350T Features

PBSS5350T General Description

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