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PBSS5350S Datasheet 50 V Low Vcesat PNP Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS5350S 50 V low VCEsat PNP transistor Product specification 2001 Nov 19 Philips Semiconductors Product specification 50 V low VCEsat PNP.

General Description

PNP low VCEsat transistor in a SOT54 plastic package.

NPN complement: PBSS4350S.

MARKING TYPE NUMBER PBSS5350S MARKING CODE S5350S Fig.1 1 handbook, halfpage PBSS5350S QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

Key Features

  • High power dissipation (830 mW).
  • Ultra low collector-emitter saturation voltage.
  • 3 A continuous current.
  • High current switching.
  • Improved device reliability due to reduced heat generation.

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