PBSS5350T
Key Features
- Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
- High collector current capability
- High collector current gain
- Improved efficiency due to reduced heat generation. APPLICATIONS
- Power management applications
- Low and medium power DC/DC convertors
- Supply line switching
- Battery chargers
- Linear voltage regulation with low voltage drop-out (LDO). DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4350T. MARKING TYPE NUMBER PBSS5350T Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPENUMBER NAME PBSS5350T - DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) ZD* Top view handbook, halfpage
