PBSS5350D
Description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D.
Key Features
- Low collector-emitter saturation voltage VCEsat
- High current capability
- High efficiency due to less heat generation
- AEC-Q101 qualified
- Smaller Printed-Circuit Board (PCB) area than for conventional transistors
