Datasheet Summary
SOT457
50 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 6
- 28 June 2011
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN plement: PBSS4350D
1.2 Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High current capability
- High efficiency due to less heat generation
- AEC-Q101 qualified
- Smaller Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
- Supply line switching circuits
- Battery management applications
- DC-to-DC conversion
1.4 Quick reference data
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