PBSS5480X Datasheet - NXP

PNP low VCEsat (BISS) transistor

PBSS5480X Features

* High hFE and low VCEsat at high current operation

* High collector current IC: 4 A

* High efficiency leading to less heat generation. APPLICATIONS

* Medium power peripheral drivers (e.g. fans and motors)

* Strobe flash units for digital still cameras and mob

PBSS5480X General Description

PNP low VCEsat (BISS) transistor in a SOT89 (SC-62) plastic package. NPN complement: PBSS4480X. MARKING TYPE NUMBER PBSS5480X Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. MARKING CODE(1) *1Z 3 2 1 PBSS5480X QUICK REFERENCE DATA SYMBOL VCEO IC ICM .

PBSS5480X Datasheet (138.39 KB)

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Datasheet Details

Part number:

PBSS5480X

Manufacturer:

NXP ↗

File Size:

138.39 KB

Description:

Pnp low vcesat (biss) transistor.
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat (BISS) transistor Product speciﬁca.

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TAGS

PBSS5480X PNP low VCEsat BISS transistor NXP

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PBSS5480X Features

PBSS5480X General Description

Datasheet Details

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