PBSS5630PA Key Features
- Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Ci
- Part: PBSS5630PA
- Manufacturer: NXP Semiconductors (official site)
- Size: 386.77 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| PBSS5612PA | PNP transistor |
| PBSS5620PA | 6 A PNP low VCEsat (BISS) transistor |
| PBSS5112PAP | PNP/PNP low VCEsat (BISS) transistor |
| PBSS5120T | 20 V/ 1 A PNP low VCEsat (BISS) transistor |
| PBSS5130PAP | PNP/PNP low VCEsat (BISS) transistor |
PBSS5630PA Description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.