* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plasti
PBSS5630PA Datasheet (386.77 KB)
PBSS5630PA
386.77 KB
6 a pnp low vcesat (biss) transistor.
www.DataSheet4U.com PBSS5630PA 30 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 19 March 2010 Product data sheet 1. Product profile 1.1 .
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