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PDTA114EE

PDTA114EE is PNP resistor-equipped transistor manufactured by NXP Semiconductors.
PDTA114EE datasheet preview

PDTA114EE Datasheet

Part number PDTA114EE
Download PDTA114EE Datasheet (PDF)
File Size 715.86 KB
Manufacturer NXP Semiconductors
Description PNP resistor-equipped transistor
PDTA114EE page 2 PDTA114EE page 3

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PDTA114EE Distributor

PDTA114EE Description

PNP resistor-equipped transistor in an SC-75 plastic package. MARKING TYPE NUMBER PDTA114EE 2 1 3 MARKING CODE 03 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = −5 mA;.

PDTA114EE Key Features

  • Built-in bias resistors R1 and R2 (typ. 10 kΩ each)
  • Simplification of circuit design
  • Reduces number of ponents and board space

PDTA114EE Applications

  • Especially suitable for space reduction in interface and driver circuits

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