PDTA114ET Datasheet - NXP

PDTA114ET PNP resistor-equipped transistor

PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC114ET. 1 3 2 MARKING TYPE NUMBER PDTA114ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗03 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Fig..

PDTA114ET Features

* Built-in bias resistors R1 and R2 (typ. 10 kΩ each)

* Simplification of circuit design

* Reduces number of components and board space. APPLICATIONS

* Especially suitable for space reduction in interface and driver circuits

* Inverter circuit configurations w

PDTA114ET_PhilipsSemiconductors.pdf