PDTA114ET
Key Features
- Built-in bias resistors R1 and R2 (typ. 10 kΩ each)
- Simplification of circuit design
- Especially suitable for space reduction in interface and driver circuits
- 2.5 7 0.8 - PARAMETER
- 65 - -65 CONDITIONS open emitter open base open collector
- MIN. PDTA114ET MAX. -50 -50 -10 10 -40 -100 -100 250 +150 150 +150 V V V V V UNIT mA mA mW °C °C °C VALUE 500 UNIT K/W TYP
- 102 VCE = -5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -40 °C. IC/IB =
