PDTA114ET Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTA114ET PNP resistor-equipped transistor Product specification Supersedes data of 1998 May 15 1999 Apr 13 Philips Semiconductors Product specification PNP resistor-equipped transistor Features - Built-in bias resistors R1 and R2 (typ. 10 kΩ each) - Simplification of circuit design - Reduces number of ponents and board space. APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of external resistors. handbook, 4 columns 3 3 R1 1 R2 2 1 2 MAM100 Top view Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN plement: PDTC114ET. 1 3 2 MARKING TYPE NUMBER PDTA114ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗03 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. 1999 Apr 13 Philips Semiconductors Product specification PNP resistor-equipped transistor LIMITING VALUES In accordance with the...