npn resistor-equipped transistor.
* Power dissipation comparable to SOT23
* Built-in bias resistors R1 and R2 (typ. 10 kΩ each)
* Simplification of circuit design
* Reduces number of compo.
* Especially suitable for space reduction in interface and driver circuits
* Inverter circuit configurations wit.
NPN resistor-equipped transistor encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. PNP complement: PDTA114EEF. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output
1 2
MGA893 - 1
PDTC114EEF
handbook, halfpage
3.
Image gallery
TAGS
Download (Size : 49.67KB)