PESD12VS2UT
PESD12VS2UT is Double ESD protection diodes manufactured by NXP Semiconductors.
- Part of the PESD3V3S2UT comparator family.
- Part of the PESD3V3S2UT comparator family.
FEATURES
- Uni-directional ESD protection of up to two lines
- Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs
- Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A
- Ultra-low reverse leakage current: IRM < 700 n A
- ESD protection > 23 k V
- IEC 61000-4-2; level 4 (ESD)
- IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.
APPLICATIONS
- puters and peripherals
- munication systems
- Audio and video equipment
- High speed data lines
- Parallel ports.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VALUE
UNIT
VRWM reverse stand-off 3.3, 5.2, 12, 15 V voltage and 24
Cd diode capacitance 207, 152, 38, 32 p F
VR = 0 V; and 23 f = 1 MHz number of protected lines
PINNING
PIN 1 2 3
DESCRIPTION cathode 1 cathode 2 mon anode
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT23 plastic package. Designed to protect up to two transmission or data lines from Electro Static Discharge (ESD) damage.
MARKING
TYPE NUMBER PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT
MARKING CODE(1)
- U9
- U1
- U2
- U3
- U4
Note
1.
- = p : made in Hong Kong.
- = t : made in Malaysia.
- = W : made in...
