PESD3V3S2UAT Datasheet - NXP

Double ESD protection diodes in SOT23 package

PESD3V3S2UAT Features

* Unidirectional ESD protection of up to two lines

* Common-cathode configuration

* Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs

* Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A

* Ultra-low reverse leakage current: IRM < 700 nA

* ESD protectio

PESD3V3S2UAT General Description

Unidirectional double ESD protection diodes in common cathode configuration in the SOT23 plastic package. Designed to protect up to two transmission or data lines against damage from ElectroStatic Discharge (ESD) and other transients. MARKING TYPE NUMBER PESD3V3S2UAT PESD5V0S2UAT PESD12VS2UAT PESD15.

PESD3V3S2UAT Datasheet (122.38 KB)

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PESD3V3S2UAT

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NXP ↗

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Description:

Double esd protection diodes in sot23 package.
DISCRETE SEMICONDUCTORS DATA SHEET PESDxS2UAT series Double ESD protection diodes in SOT23 package Product speciﬁcation 2004 Feb 18 Philips Semicon.

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PESD3V3S2UAT Double ESD protection diodes SOT23 package NXP

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PESD3V3S2UAT Features

PESD3V3S2UAT General Description

Datasheet Details

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