PESD3V3S4UF Datasheet | NXP Semiconductors

description Unidirectional quadruple Electro Static Discharge (ESD) protection diode arrays in a small SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four signal lines from the damage caused by ESD and other transients. 1.2 Features I ESD protection of up to four lines I Max. peak pulse power: PPP = 110 W I Low clamping voltage: VCL = 11 V I Ultra low leakage current: IRM = 4 n A I ESD protection up to 30 k V I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5 (surge); IPP = 10 A I AEC-Q101 qualified 1.3 Applications I puters and peripherals I Audio and video equipment I Cellular handsets and accessories I munication systems I Portable electronics 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VRWM reverse standoff voltage PESD3V3S4UF PESD5V0S4UF Cd diode capacitance PESD3V3S4UF f = 1 MHz; VR = 0 V PESD5V0S4UF Min Typ Max Unit - - 3.3 V - - 5.0 V - 110 300 p F - 85 220 p F NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description cathode (diode 1) mon anode cathode (diode 2) cathode (diode 3) mon anode cathode (diode 4) Simplified outline 65 bottom view Symbol 16 25 34 006aaa156 3. Ordering information Table 3. Ordering information Type number Package Name Description...