PHB42N03LT Datasheet | NXP Semiconductors

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET Features - ’Trench’ technology - Very low on-state resistance - Fast switching - Stable off-state characteristics - High thermal cycling performance - Low thermal resistance - Surface mounting package SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 42 A g RDS(ON) ≤ 26 mΩ (VGS = 5 V) RDS(ON) ≤ 23 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The...