PHB45N03LT fet equivalent, trenchmos transistor logic level fet.
* ’Trench’ technology
* Very low on-state resistance
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low .
The PHB45N03LT is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab gate drain (no connection pos.
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching application.
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