PHD24N03 Datasheet - NXP

Transistor

PHD24N03 Features

* ’Trench’ technology

* Very low on-state resistance

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Low thermal resistance PHD24N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 24 A g RDS(ON) ≤ 56 mΩ (V

PHD24N03 General Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHD24N03LT is supplied in the SOT428 (DPA.

PHD24N03 Datasheet (50.88 KB)