PHD50N06LT Datasheet - NXP

N-Channel MOSFET

PHD50N06LT Features

* ’Trench’ technology

* Very low on-state resistance

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Low thermal resistance PHP50N06LT, PHB50N06LT, PHD50N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 50

PHD50N06LT General Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP50N06LT is supplied in the SOT78 (TO22.

PHD50N06LT Datasheet (80.79 KB)