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PHD5N20E Datasheet - NXP

PowerMOS transistor

PHD5N20E General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power S.

PHD5N20E Datasheet (55.03 KB)

Preview of PHD5N20E PDF

Datasheet Details

Part number:

PHD5N20E

Manufacturer:

NXP ↗

File Size:

55.03 KB

Description:

Powermos transistor.

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PHD5N20E PowerMOS transistor NXP

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