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PHM18NQ15T - TrenchMOS standard level FET

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Features

  • s SOT96 (SO-8) footprint compatible s Surface mounted package s Low thermal resistance s Low profile. 1.3.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com PHM18NQ15T TrenchMOS™ standard level FET Rev. 02 — 20 August 2004 M3D879 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s SOT96 (SO-8) footprint compatible s Surface mounted package s Low thermal resistance s Low profile. 1.3 Applications www.DataSHeet4U.com Symbol 1 4 s DC-to-DC converter primary side switch s Portable equipment applications. 1.4 Quick reference data s VDS ≤ 150 V s Ptot ≤ 62.5 W s ID ≤ 19 A s RDSon ≤ 75 mΩ. 2.
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