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PHM21NQ15T - TrenchMOS standard level FET

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Features

  • s SOT96 (SO8) footprint compatible s Surface mounted package s Low thermal resistance s Low profile. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PHM21NQ15T TrenchMOS™ standard level FET Rev. 02 — 11 September 2003 M3D879 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s SOT96 (SO8) footprint compatible s Surface mounted package s Low thermal resistance s Low profile. 1.3 Applications s DC-to-DC primary side s Portable equipment applications. www.DataSHeet4U.com Symbol 1 4 d g s MBB076 1.4 Quick reference data s VDS ≤ 150 V s Ptot ≤ 62.5 W s ID ≤ 22.2 A s RDSon ≤ 55 mΩ 2. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 mb Pinning - SOT685-1 (QLPAK), simplified outline and symbol Description source (s) gate (g) drain (d) mounting base connected to drain mb [1] Simplified outline ww.DataSheet4U.
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