PHW8ND50E Datasheet - NXP

PowerMOS transistors FREDFET/ Avalanche energy rated

PHW8ND50E Features

* Repetitive Avalanche Rated

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Low thermal resistance

* Fast reverse recovery diode SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 8.5 A g RDS(ON) ≤ 0.85 Ω s tr

PHW8ND50E General Description

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits. T.

PHW8ND50E Datasheet (91.19 KB)