PMCM650VNE Datasheet, NXP

* Low threshold voltage
* Ultra small package: 0.98 × 1.48 × 0.35 mm
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. .

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference d.

N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits
* Low threshold voltage
* Ultra small package: 0.98 × 1.48 × 0.35 mm
* T.