PMCM650VNE Key Features
- Low threshold voltage
- Ultra small package: 0.98 × 1.48 × 0.35 mm
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
- Part: PMCM650VNE
- Manufacturer: NXP Semiconductors (official site)
- Size: 366.84 KB
Other PMCM650VNE Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nexperia |
PMCM6501UNE | N-channel Trench MOSFET |
|
Nexperia |
PMCM6501UPE | P-channel Trench MOSFET |
|
Nexperia |
PMCM6501VNE | N-channel MOSFET |
|
Nexperia |
PMCM6501VPE | P-channel MOSFET |
|
Nexperia |
PMCM650CUNE | Common Drain N-channel Trench MOSFET |
PMCM650VNE Description
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.