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PMCM6501UPE Datasheet

Manufacturer: Nexperia
PMCM6501UPE datasheet preview

Datasheet Details

Part number PMCM6501UPE
Datasheet PMCM6501UPE-nexperia.pdf
File Size 372.94 KB
Manufacturer Nexperia
Description P-channel Trench MOSFET
PMCM6501UPE page 2 PMCM6501UPE page 3

PMCM6501UPE Overview

P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

PMCM6501UPE Key Features

  • Low threshold voltage
  • Ultra small package: 0.98 x 1.48 x 0.35 mm
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

PMCM6501VNE from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
NXP Logo PMCM6501VNE N-channel Trench MOSFET NXP
NXP Logo PMCM6501VPE P-channel Trench MOSFET NXP
Nexperia logo - Manufacturer

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PMCM6501UPE Distributor

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