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PMCM6501VPE - P-channel Trench MOSFET

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NXP

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PMCM6501VPE P-channel Trench MOSFET by NXP - Datasheet Preview — Datasheet preview – PMCM6501VPE

Datasheet Details

Part number	PMCM6501VPE
Manufacturer	NXP
File Size	358.11 KB
Description	P-channel Trench MOSFET
Datasheet	PMCM6501VPE Datasheet
Additional preview pages of the PMCM6501VPE datasheet.

Product details

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Features

Low threshold voltage.
Ultra small package: 0.98 × 1.48 × 0.35 mm.
Trench MOSFET technology.
ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

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Published: Mar 4, 2016 |