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PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
Rev. 1.0 — 8 November 2017
Product data sheet
WLCSP6
1 Product profile
1.1 General description
N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
1.2 Features and benefits
• Common-drain type for bi-directional current flow • Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM
1.3 Applications
• Loadswitch • Battery Protection • Battery Management
1.4 Quick reference data
Table 1.
PMCM650CUNE Datasheet
