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PMCM650VNE - N-channel Trench MOSFET

Datasheet Summary

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Ultra small package: 0.98 × 1.48 × 0.35 mm.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

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Datasheet Details

Part number PMCM650VNE
Manufacturer NXP
File Size 366.84 KB
Description N-channel Trench MOSFET
Datasheet download datasheet PMCM650VNE Datasheet
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WLCSP6 PMCM650VNE 12 V, N-channel Trench MOSFET 7 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.
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