PMDXB1200UPE Key Features
- Low threshold voltage
- Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
- Part: PMDXB1200UPE
- Manufacturer: NXP Semiconductors (official site)
- Size: 230.89 KB
Other PMDXB1200UPE Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nexperia |
PMDXB1200UPE | dual P-channel MOSFET |
PMDXB1200UPE Description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.