PMDXB1200UPE Datasheet
PMDXB1200UPE Datasheet (NXP Semiconductors)
NXP Semiconductors
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features a.
and benefits
* Low threshold voltage
* Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits
4..
PMDXB1200UPE Datasheet (Nexperia)
Nexperia
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features a.
and benefits
* Low threshold voltage
* Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits
4..