Datasheet4U Logo Datasheet4U.com

PMDXB1200UPE Datasheet dual P-channel Trench MOSFET

Manufacturer: NXP Semiconductors

General Description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Overview

DFN1010B- 6 PMDXB1200UPE 30 V, dual P-channel Trench MOSFET 25 March 2015 Product data sheet 1.

Key Features

  • Low threshold voltage.
  • Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.