Datasheet Summary
30 V, dual P-channel Trench MOSFET
25 March 2015
Product data sheet
1. General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per...
