Datasheet4U Logo Datasheet4U.com

PMEM4020APD - PNP transistor/Schottky rectifer module

General Description

Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package.

NPN complement: PMEM4020AND.

Key Features

  • s s s s s s 600 mW total power dissipation High current capability up to 2 A Reduces printed-circuit board area required Reduces pick and place costs Small plastic SMD package Transistor x Low collector-emitter saturation voltage. s Diode x Ultra high-speed switching x Very low forward voltage x Guard ring protected. 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PME-0503SH30Z 0.25 Watt DC-DC Converter Make-Ps
PME-0503SZ 0.25 Watt DC-DC Converter Make-Ps
PME-0505SH30Z 0.25 Watt DC-DC Converter Make-Ps
PME-0505SZ 0.25 Watt DC-DC Converter Make-Ps
PME-0507SH30Z 0.25 Watt DC-DC Converter Make-Ps

Other Datasheets by NXP Semiconductors

Part Number Description
PMEM4020AND NPN transistor/Schottky rectifer module
PMEM4020ND NPN transistor/Schottky-diode module
PMEM4020PD PNP transistor/Schottky-diode module
PMEM4010PD PNP transistor/Schottky diode module
PMEM4030NS NPN transistor/Schottky rectifer module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMEM4020APD PNP transistor/Schottky rectifier module Rev. 01 — 4 October 2004 www.DataSheet4U. Product data sheet 1. Product profile 1.1 General description Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. NPN complement: PMEM4020AND. 1.2 Features s s s s s s 600 mW total power dissipation High current capability up to 2 A Reduces printed-circuit board area required Reduces pick and place costs Small plastic SMD package Transistor x Low collector-emitter saturation voltage. s Diode x Ultra high-speed switching x Very low forward voltage x Guard ring protected. 1.