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PMEM4020PD - PNP transistor/Schottky-diode module

Description

Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package.

NPN complement: PMEM4020ND.

Features

  • 600 mW total power dissipation.
  • High current capability.
  • Reduces required PCB area.
  • Reduced pick and place costs.
  • Small plastic SMD package. Transistor.
  • Low collector-emitter saturation voltage. Diode.
  • Ultra high-speed switching.
  • Very low forward voltage.
  • Guard ring protected.

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Part Number Description
PMEM4020AND NPN transistor/Schottky rectifer module
PMEM4020APD PNP transistor/Schottky rectifer module
PMEM4020ND NPN transistor/Schottky-diode module
PMEM4010PD PNP transistor/Schottky diode module
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMEM4020PD PNP transistor/Schottky-diode module Product specification 2003 Nov 24 www.DataSheet4U.com www.DataSheet4U.com Philips Semiconductors Product specification PNP transistor/Schottky-diode module FEATURES • 600 mW total power dissipation • High current capability • Reduces required PCB area • Reduced pick and place costs • Small plastic SMD package. Transistor • Low collector-emitter saturation voltage. Diode • Ultra high-speed switching • Very low forward voltage • Guard ring protected. APPLICATIONS • DC-to-DC converters • Inductive load drivers • General purpose load drivers • Reverse polarity protection circuits.
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