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PSMN1R0-40YLD - N-channel MOSFET

General Description

Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

This product has been designed and qualified for high performance power switching applications.

2.

Key Features

  • NextPower-S3 technology delivers 'superfast switching with soft recovery'.
  • Low QRR, QG and QGD for high system efficiency and low EMI designs.
  • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
  • Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology.
  • High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 °C.
  • Exposed leads can be wave soldere.

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Full PDF Text Transcription for PSMN1R0-40YLD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PSMN1R0-40YLD. For precise diagrams, and layout, please refer to the original PDF.

LFPAK56 PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 August 2014 Product data sheet 1. General descrip...

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y-Plus technology 25 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • NextPower-S3 technology delivers 'superfast switching with soft recovery' • Low QRR, QG and QGD for high system efficiency and low EMI designs • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage • Optimised for 4.

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