PTB23005X
FEATURES
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability. APPLICATIONS mon-base, class B power amplifiers up to 4.2 GHz. DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. olumns
PTB23001X; PTB23003X; PTB23005X
PINNING
- SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
1 c b 3 2 Top view
MAM131 e
MARKING TYPE NUMBER PTB23001X PTB23003X PTB23005X MARKING CODE 2301X 2303X 2305X Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon-base class B circuit. TYPE...
