Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors
Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistors
Features
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and...