Datasheet4U Logo Datasheet4U.com

PTB23005X - NPN microwave power transistors

Description

NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.

Features

  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PTB20003 4 Watts/ 915-960 MHz Cellular Radio RF Power Transistor Ericsson
PTB20004 50 Watts/ 860-900 MHz Cellular Radio RF Power Transistor Ericsson
PTB20005 15 Watts/ 860-900 MHz Cellular Radio RF Power Transistor Ericsson
PTB20006 4 Watts/ 860-900 MHz Cellular Radio RF Power Transistor Ericsson
PTB20007 30 Watts/ 935-960 MHz Cellular Radio RF Power Transistor Ericsson

Other Datasheets by NXP Semiconductors

Part Number Description
PTB23001X NPN microwave power transistors
PTB23002U NPN microwave power transistor
PTB23003X NPN microwave power transistor
PTB23003X NPN microwave power transistors
PTB23006U Microwave power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Multicell geometry gives good balance of dissipated power and low thermal resistance • Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability. APPLICATIONS Common-base, class B power amplifiers up to 4.2 GHz.
Published: |