NPN microwave power transistors
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
• Localized thick oxide auto-alignment process and gold
sandwich metallization ensure an optimum temperature
profile and excellent performance and reliability.
PINNING - SOT440A
3 base connected to ﬂange
Common-base, class B power amplifiers up to 4.2 GHz.
NPN silicon planar epitaxial microwave power transistor in
a metal ceramic SOT440A flange package with base
connected to the flange.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common-base class B circuit.
3 24 ≥1.3 ≥8
3 24 ≥2.5 ≥8
3 24 ≥4.5 ≥8
15 + j31
5.5 + j29
2.8 + j20
5.5 + j10
5 − j2.2
4 − j7
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18