PXTA42 Datasheet | NXP Semiconductors

FEATURES - Low current (max. 100 m A) - High voltage (max. 300 V). APPLICATIONS - Telephony and professional munication equipment. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP plement: PXTA92. MARKING TYPE NUMBER PXTA42 MARKING CODE p1D 1 Bottom view 2 3 MAM296 PINNING PIN 1 2 3 emitter collector base DESCRIPTION handbook, halfpage 2 3 1 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. 300 300 6 100 200 100 1.3 +150 150 +150 V V V m A m A m A W °C °C °C UNIT 1999 Apr 26 Philips Semiconductors Product specification NPN high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 96 16 UNIT K/W K/W 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 200 V IC = 0; VBE = 6 V IC = 1 m A; VCE = 10 V IC = 10 m A; VCE = 10 V IC = 30 m A; VCE = 10 V...