RX1214B170W transistor equivalent, microwave power transistor.
* Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor
* Diffused emitter ballasting resistors improve ruggedness
* Interd.
up to 1 ms pulse width, 10% duty factor
* Diffused emitter ballasting resistors improve ruggedness
* Interdigita.
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.
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RX1214B170W
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrow.
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