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NXP Semiconductors Electronic Components Datasheet

RX1214B170W Datasheet

Microwave power transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
RX1214B170W
Microwave power transistor
Product specification
Supersedes data of December 1994
1997 Feb 18


NXP Semiconductors Electronic Components Datasheet

RX1214B170W Datasheet

Microwave power transistor

No Preview Available !

Philips Semiconductors
Microwave power transistor
Product specification
RX1214B170W
FEATURES
Suitable for short and medium
pulse applications up to 1 ms pulse
width, 10% duty factor
Diffused emitter ballasting resistors
improve ruggedness
Interdigitated emitter-base
structure provides high emitter
efficiency
Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
Multicell geometry improves power
sharing and reduces thermal
resistance
Internal input and output
prematching networks allow an
easier design of circuits.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common base class C
narrowband amplifier.
MODE OF
OPERATION
CONDITIONS
f
(GHz)
Class C
tp = 500 µs;
δ = 10%
1.2 to 1.4
VCC
(V)
42
PL
(W)
170
Gp
(dB)
6.7
ηC
(%)
40
PINNING - SOT439A
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
APPLICATIONS
Intended for use in common-base
class C broadband pulsed power
amplifiers for radar applications in the
1.2 to 1.4 GHz band. Also suitable for
long pulse, heavy duty operation
within this band.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with base connected to
flange.
ok, 4 columns
3
Top view
1
c
b
3
e
2 MAM045
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2


Part Number RX1214B170W
Description Microwave power transistor
Maker NXP
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RX1214B170W Datasheet PDF






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