RX1214B350Y Description
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange. handbook, 4 columns RX1214B350Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon base class C broadband amplifier. MODE OF OPERATION Class C CONDITIONS tp = 130 µs;.
RX1214B350Y Key Features
- Suitable for short and medium pulse