NXP Semiconductors RX1214B350Y
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.| Part No. | RX1214B350Y |
|---|---|
| Datasheet | RX1214B350Y Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN microwave power transistor |
| Buy | Stock & Price |
FEATURES
● Suitable for short and medium pulse applications up to 1 ms/10%● Internal input prematching networks allow an easier design of circuits
● Diffused emitter ballasting resistors improve ruggedness
● Interdigitated emitter-base structure provides high emitter efficiency
● Gold metallization with barrier realizes very stable characteristics and excellent lifetime
● Multicell geometry improves power sharing and reduces thermal resistance.
APPLICATIONS
Common base, class C, broadband, pulsed power amplifiers for L-Band radar applications in the 1.2 to 1.4 GHz band. Also suitable for medium pulse, heavy duty operation within this band.DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange. handbook, 4 columns RX1214B350Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier. MODE OF OPERATION Class C CONDITIONS tp = 130 µs; δ = 6% f (GHz) 1.2 to...
