RX1214B170W Description
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. ok, 4 columns RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon base class C narrowband amplifier. MODE OF OPERATION Class C CONDITIONS tp = 500 µs;.
RX1214B170W Key Features
- Suitable for short and medium pulse