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RX1214B170W - Microwave power transistor

Description

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier.

Features

  • Suitable for short and medium pulse.

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Datasheet preview – RX1214B170W

Datasheet Details

Part number RX1214B170W
Manufacturer NXP
File Size 74.63 KB
Description Microwave power transistor
Datasheet download datasheet RX1214B170W Datasheet
Additional preview pages of the RX1214B170W datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure provides high emitter efficiency • Gold metallization with barrier realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and reduces thermal resistance • Internal input and output prematching networks allow an easier design of circuits.
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