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2N7002BKMB
83B
60 V, single N-channel Trench MOSFET
Rev. 2 — 13 June 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
SO
T8
1.2 Features and benefits
Very fast switching Trench MOSFET technology ESD protection up to 2 kV Logic-level compatible Ultra thin package profile with 0.37 mm height
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1.
2N7002BKMB Datasheet
