Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 °C ≤ Tj ≤ 150 °C
Tsp = 25 °C; VGS = 4.5 V
Tsp = 25 °C
VGS = 4.5 V; ID = 500 mA
VGS = 2.5 V; ID = 75 mA
VGS = 1.8 V; ID = 75 mA
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage
drain current (DC)
25 °C ≤ Tj ≤ 150 °C
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
Tsp = 25 °C; VGS = 4.5 V;
Figure 2 and 3
IDM peak drain current
Tsp = 100 °C; VGS = 4.5 V; Figure 2
Tsp = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
Ptot total power dissipation
Tsp = 25 °C; Figure 1
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25 °C
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs
Typ Max Unit
- 55 V
- 335 mA
- 0.83 W
- 150 °C
2.3 4.0 Ω
2.4 5.0 Ω
3.1 8.0 Ω
Min Max Unit
- 55 V
- 55 V
- ±10 V
- 335 mA
- 212 mA
- 1.3 A
- 0.83 W
−65 +150 °C
−65 +150 °C
- 335 mA
- 1.3 A
9397 750 09629
Product data
Rev. 02 — 26 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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