900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

BSH111 Datasheet

N-Channel MOSFET

No Preview Available !

BSH111
N-channel enhancement mode field-effect transistor
Rev. 02 — 26 April 2002
M3D088
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
BSH111 in SOT23.
2. Features
s TrenchMOS™ technology
s Very fast switching
s Low threshold voltage
s Subminiature surface mount package.
3. Applications
s Battery management
s High speed switch
s Logic level translator.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 source (s)
3
3 drain (d)
12
Top view
MSB003
SOT23
Symbol
d
g
MBB076
s


NXP Semiconductors Electronic Components Datasheet

BSH111 Datasheet

N-Channel MOSFET

No Preview Available !

Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 °C Tj 150 °C
Tsp = 25 °C; VGS = 4.5 V
Tsp = 25 °C
VGS = 4.5 V; ID = 500 mA
VGS = 2.5 V; ID = 75 mA
VGS = 1.8 V; ID = 75 mA
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage
drain current (DC)
25 °C Tj 150 °C
25 °C Tj 150 °C; RGS = 20 k
Tsp = 25 °C; VGS = 4.5 V;
Figure 2 and 3
IDM peak drain current
Tsp = 100 °C; VGS = 4.5 V; Figure 2
Tsp = 25 °C; pulsed; tp 10 µs;
Figure 3
Ptot total power dissipation
Tsp = 25 °C; Figure 1
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25 °C
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp 10 µs
Typ Max Unit
- 55 V
- 335 mA
- 0.83 W
- 150 °C
2.3 4.0
2.4 5.0
3.1 8.0
Min Max Unit
- 55 V
- 55 V
- ±10 V
- 335 mA
- 212 mA
- 1.3 A
- 0.83 W
65 +150 °C
65 +150 °C
- 335 mA
- 1.3 A
9397 750 09629
Product data
Rev. 02 — 26 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
2 of 13


Part Number BSH111
Description N-Channel MOSFET
Maker NXP Semiconductors
PDF Download

BSH111 Datasheet PDF






Similar Datasheet

1 BSH111 N-Channel MOSFET
NXP Semiconductors
2 BSH111BK N-Channel MOSFET
nexperia
3 BSH112 N-channel enhancement mode field-effect transistor
NXP
4 BSH114 N-channel enhancement mode field effect transistor
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy