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BSH112 - N-channel enhancement mode field-effect transistor

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: BSH112 in SOT23.

2.

Key Features

  • s s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package Gate-source ESD protection diodes. 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 M3D088 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH112 in SOT23. 2. Features s s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package Gate-source ESD protection diodes. 3. Applications c c s Relay driver s High speed line driver s Logic level translator. 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) 3 Simplified outline Symbol source (s) drain (d) g d 03ab44 03ab60 1 2 s SOT23 N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics.