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BSH112 Datasheet N-channel Enhancement Mode Field-effect Transistor

Manufacturer: NXP Semiconductors

Overview: BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 M3D088 Product specification 1.

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: BSH112 in SOT23.

2.

Key Features

  • s s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package Gate-source ESD protection diodes. 3.

BSH112 Distributor