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BSH111 - N-Channel MOSFET

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability: BSH111 in SOT23.

2.

Key Features

  • s s s s TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package. 3.

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Full PDF Text Transcription (Reference)

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BSH111 N-channel enhancement mode field-effect transistor Rev. 02 — 26 April 2002 M3D088 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: BSH111 in SOT23. 2. Features s s s s TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Logic level translator. 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) 3 d Simplified outline Symbol source (s) drain (d) 1 Top view 2 MSB003 g s MBB076 SOT23 Philips Semiconductors BSH111 N-channel enhancement mode field-effect transistor 5.